PSPICE Electrical Model
.SUBCKT FDB8896 2 1 3 ; rev December 2003
Ca 12 8 2.3e-9
LDRAIN
Cb 15 14 2.3e-9
Cin 6 8 2.3e-9
10
DPLCAP
5
DRAIN
2
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
RSLC2
RSLC1
51
5
ESLC
51
DBREAK
11
RLDRAIN
9
20
Ebreak 11 7 17 18 33
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
It 8 17 1
GATE
1
LGATE
RLGATE
-
ESG
+
EVTEMP
RGATE + 18 -
22
6
8
6
EVTHRES
+ 19 -
8
50
RDRAIN
16
21
MMED
MSTRO
+
17
EBREAK 18
-
MWEAK
DBODY
Lgate 1 9 5.5e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 2.7e-9
CIN
8
RSOURCE
7
LSOURCE
RLSOURCE
SOURCE
3
RLgate 1 9 55
RLdrain 2 5 10
12
S1A
13
8
S2A
14
13
15
17
RBREAK
18
RLsource 3 7 27
S1B
S2B
RVTEMP
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
CA
13
+
EGS
6
8
CB
+
EDS
5
8
14
IT
19
-
VBAT
+
Rbreak 17 18 RbreakMOD 1
-
-
8
22
Rdrain 50 16 RdrainMOD 2.1e-3
RVTHRES
Rgate 9 20 2.3
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 2e-3
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*500),10))}
.MODEL DbodyMOD D (IS=4E-12 IKF=10 N=1.01 RS=2.6e-3 TRS1=8e-4 TRS2=2e-7
+ CJO=8.8e-10 M=0.57 TT=1e-16 XTI=2.2)
.MODEL DbreakMOD D (RS=8e-2 TRS1=1e-3 TRS2=-8.9e-6)
.MODEL DplcapMOD D (CJO=9.4e-10 IS=1e-30 N=10 M=0.4)
.MODEL MmedMOD NMOS (VTO=1.98 KP=10 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=2.3 T_ABS=25)
.MODEL MstroMOD NMOS (VTO=2.4 KP=350 IS=1e-30 N=10 TOX=1 L=1u W=1u T_ABS=25)
.MODEL MweakMOD NMOS (VTO=1.68 KP=0.05 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=23 RS=0.1 T_ABS=25)
.MODEL RbreakMOD RES (TC1=8.3e-4 TC2=-4e-7)
.MODEL RdrainMOD RES (TC1=1.2e-3 TC2=8e-6)
.MODEL RSLCMOD RES (TC1=9e-4 TC2=1e-6)
.MODEL RsourceMOD RES (TC1=7.5e-3 TC2=1e-6)
.MODEL RvthresMOD RES (TC1=-2.4e-3 TC2=-8.8e-6)
.MODEL RvtempMOD RES (TC1=-2.6e-3 TC2=2e-7)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-3)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3 VOFF=-4)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2 VOFF=-0.5)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.5 VOFF=-2)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options ; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
?200 8 Fairchild Semiconductor Corporation
FDB8896 Rev. B 2
相关PDF资料
FDC2512_F095 MOSFET N-CH 150V 1.4A 6-SSOT
FDC2612_F095 MOSFET N-CH 200V 1.1A 6-SSOT
FDC3512_F095 MOSFET N-CH 80V 3A 6-SSOT
FDC3535 MOSFET P-CH 80V 6-SSOT
FDC3601N MOSFET N-CH DUAL 100V SSOT-6
FDC3612_F095 MOSFET N-CH 100V 2.6A 6-SSOT
FDC365P MOSFET P-CH 35V 4.3A 6-SSOT
FDC5612_F095 MOSFET N-CH 60V 4.3A 6-SSOT
相关代理商/技术参数
FDB8896_08 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET
FDB8896_F085 功能描述:MOSFET 30V N-CHAN PwrTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB9403 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Power Trench?? MOSFET 40V, 110A, 1.2m??
FDB9403_F085 功能描述:MOSFET 40V 110A 1.2m? N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB9406_F085 功能描述:MOSFET 40V, 110A, 1.8m Ohm NChannel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB-9PF 制造商:HRS 制造商全称:HRS 功能描述:FD TYPE CONNECTOR FOR RIBBON CABLE
FDB-9SF 制造商:HRS 制造商全称:HRS 功能描述:FD TYPE CONNECTOR FOR RIBBON CABLE
FDBA54106PNK 制造商:TE Connectivity / Deutsch 功能描述:FDBA Round Flange receptacle